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TK8A60DA(STA4,Q,M)
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TK8A60DA(STA4,Q,M)

MOSFET N-CH 600V 7.5A TO-220SIS
Numărul piesei
TK8A60DA(STA4,Q,M)
Producator/Marca
Toshiba Semiconductor and Storage
Serie
π-MOSVII
Stare piese
Active
Ambalare
Tube
Tehnologie
MOSFET (Metal Oxide)
Temperatura de Operare
150°C (TJ)
Tip de montare
Through Hole
Pachet / Cutie
TO-220-3 Full Pack
Pachetul dispozitivului furnizorului
TO-220SIS
Disiparea puterii (max.)
45W (Tc)
Tip FET
N-Channel
Caracteristica FET
-
Tensiune de scurgere la sursă (Vdss)
600V
Curent - Drenaj continuu (Id) la 25°C
7.5A (Ta)
Rds On (Max) @ Id, Vgs
1 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Taxă de poartă (Qg) (Max) @ Vgs
20nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds
1050pF @ 25V
Tensiune de antrenare (Rds maxim activat, Rds min activat)
10V
Vgs (Max)
±30V
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Cuvinte cheie ale TK8A60DA(STA4,Q,M)
TK8A60DA(STA4,Q,M) Componente electronice
TK8A60DA(STA4,Q,M) Vânzări
TK8A60DA(STA4,Q,M) Furnizor
TK8A60DA(STA4,Q,M) Distribuitor
TK8A60DA(STA4,Q,M) Tabel de date
TK8A60DA(STA4,Q,M) Fotografii
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TK8A60DA(STA4,Q,M) Chip