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TK7A65W,S5X

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TK7A65W,S5X

MOSFET N-CH 650V 6.8A TO-220SIS

Numărul piesei

TK7A65W,S5X

Producator/Marca

Toshiba Semiconductor and Storage

Serie

DTMOSIV

Stare piese

Active

Ambalare

Tube

Tehnologie

MOSFET (Metal Oxide)

Temperatura de Operare

150°C (TJ)

Tip de montare

Through Hole

Pachet / Cutie

TO-220-3 Full Pack

Pachetul dispozitivului furnizorului

TO-220SIS

Disiparea puterii (max.)

30W (Tc)

Tip FET

N-Channel

Caracteristica FET

-

Tensiune de scurgere la sursă (Vdss)

650V

Curent - Drenaj continuu (Id) la 25°C

6.8A (Ta)

Rds On (Max) @ Id, Vgs

780 mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Taxă de poartă (Qg) (Max) @ Vgs

15nC @ 10V

Capacitate de intrare (Ciss) (Max) @ Vds

490pF @ 300V

Tensiune de antrenare (Rds maxim activat, Rds min activat)

10V

Vgs (Max)

±30V

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În stoc 32008 PCS

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