Buy Toshiba Semiconductor and Storage TK5A60D(STA4,Q,M) MOSFET N-CH 600V 5A TO-220SIS - YYIC

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TK5A60D(STA4,Q,M)

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TK5A60D(STA4,Q,M)

MOSFET N-CH 600V 5A TO-220SIS

Numărul piesei

TK5A60D(STA4,Q,M)

Producator/Marca

Toshiba Semiconductor and Storage

Serie

π-MOSVII

Stare piese

Active

Ambalare

Tube

Tehnologie

MOSFET (Metal Oxide)

Temperatura de Operare

150°C (TJ)

Tip de montare

Through Hole

Pachet / Cutie

TO-220-3 Full Pack

Pachetul dispozitivului furnizorului

TO-220SIS

Disiparea puterii (max.)

35W (Tc)

Tip FET

N-Channel

Caracteristica FET

-

Tensiune de scurgere la sursă (Vdss)

600V

Curent - Drenaj continuu (Id) la 25°C

5A (Ta)

Rds On (Max) @ Id, Vgs

1.43 Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Taxă de poartă (Qg) (Max) @ Vgs

16nC @ 10V

Capacitate de intrare (Ciss) (Max) @ Vds

700pF @ 25V

Tensiune de antrenare (Rds maxim activat, Rds min activat)

10V

Vgs (Max)

±30V

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