Toshiba Semiconductor and Storage
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TK31V60W,LVQ
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TK31V60W,LVQ

MOSFET N CH 600V 30.8A 5DFN
Numărul piesei
TK31V60W,LVQ
Producator/Marca
Toshiba Semiconductor and Storage
Serie
DTMOSIV
Stare piese
Discontinued at Digi-Key
Ambalare
Cut Tape (CT)
Tehnologie
MOSFET (Metal Oxide)
Temperatura de Operare
150°C (TJ)
Tip de montare
Surface Mount
Pachet / Cutie
4-VSFN Exposed Pad
Pachetul dispozitivului furnizorului
4-DFN-EP (8x8)
Disiparea puterii (max.)
240W (Tc)
Tip FET
N-Channel
Caracteristica FET
Super Junction
Tensiune de scurgere la sursă (Vdss)
600V
Curent - Drenaj continuu (Id) la 25°C
30.8A (Ta)
Rds On (Max) @ Id, Vgs
98 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.5mA
Taxă de poartă (Qg) (Max) @ Vgs
86nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds
3000pF @ 300V
Tensiune de antrenare (Rds maxim activat, Rds min activat)
10V
Vgs (Max)
±30V
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În stoc 31459 PCS
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produse asemanatoare
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Cuvinte cheie ale TK31V60W,LVQ
TK31V60W,LVQ Componente electronice
TK31V60W,LVQ Vânzări
TK31V60W,LVQ Furnizor
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TK31V60W,LVQ Tabel de date
TK31V60W,LVQ Fotografii
TK31V60W,LVQ Preț
TK31V60W,LVQ Oferi
TK31V60W,LVQ Cel mai mic pret
TK31V60W,LVQ Căutare
TK31V60W,LVQ Achizitie
TK31V60W,LVQ Chip