Buy Toshiba Semiconductor and Storage TK16E60W5,S1VX MOSFET N-CH 600V 15.8A TO-220AB - YYIC

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TK16E60W5,S1VX

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TK16E60W5,S1VX

MOSFET N-CH 600V 15.8A TO-220AB

Numărul piesei

TK16E60W5,S1VX

Producator/Marca

Toshiba Semiconductor and Storage

Serie

DTMOSIV

Stare piese

Active

Ambalare

Tube

Tehnologie

MOSFET (Metal Oxide)

Temperatura de Operare

150°C (TJ)

Tip de montare

Through Hole

Pachet / Cutie

TO-220-3

Pachetul dispozitivului furnizorului

TO-220

Disiparea puterii (max.)

130W (Tc)

Tip FET

N-Channel

Caracteristica FET

-

Tensiune de scurgere la sursă (Vdss)

600V

Curent - Drenaj continuu (Id) la 25°C

15.8A (Ta)

Rds On (Max) @ Id, Vgs

230 mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 790µA

Taxă de poartă (Qg) (Max) @ Vgs

43nC @ 10V

Capacitate de intrare (Ciss) (Max) @ Vds

1350pF @ 300V

Tensiune de antrenare (Rds maxim activat, Rds min activat)

10V

Vgs (Max)

±30V

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