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SQJ479EP-T1_GE3 Product Overview
Introduction
The SQJ479EP-T1_GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Power MOSFET
- Use: Electronic applications requiring power switching
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: TO-252-3
- Essence: Efficient power management
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage Rating: 100V
- Current Rating: 30A
- On-Resistance (RDS(on)): 8mΩ
- Gate Threshold Voltage (VGS(th)): 2.5V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SQJ479EP-T1_GE3 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High efficiency power switching
- Low on-resistance for reduced power losses
- Fast switching speed for improved performance
Advantages and Disadvantages
Advantages
- Enhanced power management capabilities
- Reduced heat dissipation
- Improved system reliability
Disadvantages
- Higher cost compared to traditional MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The SQJ479EP-T1_GE3 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, it allows the flow of current between the source and drain terminals, enabling efficient power switching.
Detailed Application Field Plans
The SQJ479EP-T1_GE3 finds extensive application in various fields, including: - Switching power supplies - Motor control systems - LED lighting - Battery management systems
Detailed and Complete Alternative Models
- SQJ480EP-T1_GE3: Similar specifications with enhanced ESD protection
- SQJ478EP-T1_GE3: Lower on-resistance for higher efficiency
In conclusion, the SQJ479EP-T1_GE3 power MOSFET offers high-performance power switching capabilities with a focus on efficiency and reliability, making it a preferred choice for diverse electronic applications.
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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SQJ479EP-T1_GE3 în soluțiile tehnice
Sure, here are 10 common questions and answers related to the application of SQJ479EP-T1_GE3 in technical solutions:
What is the operating temperature range of SQJ479EP-T1_GE3?
- The operating temperature range of SQJ479EP-T1_GE3 is -55°C to 150°C.
What is the maximum drain-source voltage rating of SQJ479EP-T1_GE3?
- The maximum drain-source voltage rating of SQJ479EP-T1_GE3 is 30V.
What is the typical on-resistance of SQJ479EP-T1_GE3?
- The typical on-resistance of SQJ479EP-T1_GE3 is 5.5mΩ at Vgs=10V.
Can SQJ479EP-T1_GE3 be used in automotive applications?
- Yes, SQJ479EP-T1_GE3 is suitable for automotive applications.
What is the gate threshold voltage of SQJ479EP-T1_GE3?
- The gate threshold voltage of SQJ479EP-T1_GE3 is typically 1.5V.
Is SQJ479EP-T1_GE3 RoHS compliant?
- Yes, SQJ479EP-T1_GE3 is RoHS compliant.
What is the maximum continuous drain current of SQJ479EP-T1_GE3?
- The maximum continuous drain current of SQJ479EP-T1_GE3 is 120A.
Does SQJ479EP-T1_GE3 have built-in ESD protection?
- Yes, SQJ479EP-T1_GE3 features built-in ESD protection.
What is the typical input capacitance of SQJ479EP-T1_GE3?
- The typical input capacitance of SQJ479EP-T1_GE3 is 6800pF.
Can SQJ479EP-T1_GE3 be used in power management applications?
- Yes, SQJ479EP-T1_GE3 is suitable for power management applications.
I hope these answers provide the information you were looking for! If you need further details on any specific question, feel free to ask.