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SQD100N04-3M6L_GE3
Product Overview
Category
The SQD100N04-3M6L_GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as in power supplies, motor control, and other high-power switching circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SQD100N04-3M6L_GE3 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity per reel, typically 250 or 500 units.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 100A
- On-Resistance (RDS(on)): 3mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SQD100N04-3M6L_GE3 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low on-resistance for minimal power dissipation
- High current-carrying capability
- Fast switching speed for improved efficiency
- Wide operating temperature range
Advantages
- High power handling capacity
- Low conduction losses
- Suitable for high-frequency switching applications
- Enhanced thermal performance
Disadvantages
- Higher gate drive requirements compared to some alternative models
- Sensitive to static electricity and overvoltage conditions
Working Principles
The MOSFET operates based on the principle of field-effect. When a voltage is applied to the gate terminal, it modulates the conductivity between the drain and source terminals, allowing for efficient control of power flow.
Detailed Application Field Plans
The SQD100N04-3M6L_GE3 is well-suited for use in: - Switched-mode power supplies - Motor drives - Inverters - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to consider include: - IRF540N - FDP8870 - STP80NF55-06
In conclusion, the SQD100N04-3M6L_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SQD100N04-3M6L_GE3 în soluțiile tehnice
What is the maximum drain-source voltage for SQD100N04-3M6L_GE3?
- The maximum drain-source voltage for SQD100N04-3M6L_GE3 is 40V.
What is the continuous drain current rating for SQD100N04-3M6L_GE3?
- The continuous drain current rating for SQD100N04-3M6L_GE3 is 100A.
What is the on-resistance (RDS(on)) of SQD100N04-3M6L_GE3?
- The on-resistance (RDS(on)) of SQD100N04-3M6L_GE3 is typically 3.6mΩ at VGS = 10V.
Can SQD100N04-3M6L_GE3 be used in automotive applications?
- Yes, SQD100N04-3M6L_GE3 is suitable for automotive applications.
What is the operating temperature range for SQD100N04-3M6L_GE3?
- The operating temperature range for SQD100N04-3M6L_GE3 is -55°C to 175°C.
Does SQD100N04-3M6L_GE3 have built-in protection features?
- SQD100N04-3M6L_GE3 does not have built-in protection features and may require external circuitry for protection.
Is SQD100N04-3M6L_GE3 RoHS compliant?
- Yes, SQD100N04-3M6L_GE3 is RoHS compliant.
What are the typical applications for SQD100N04-3M6L_GE3?
- Typical applications for SQD100N04-3M6L_GE3 include motor control, power supplies, and DC-DC converters.
What is the gate threshold voltage for SQD100N04-3M6L_GE3?
- The gate threshold voltage for SQD100N04-3M6L_GE3 is typically 2.5V.
Does SQD100N04-3M6L_GE3 require a heat sink for operation?
- Depending on the application and power dissipation, SQD100N04-3M6L_GE3 may require a heat sink for efficient operation.