SISH110DN-T1-GE3

Product Overview

SISH110DN-T1-GE3 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET exhibits high efficiency, low on-resistance, and fast switching characteristics. It is typically packaged in a small outline package (SOP) and is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 120A
• On-Resistance: 4.5mΩ
• Package Type: D2PAK

Detailed Pin Configuration

The SISH110DN-T1-GE3 features a standard pin configuration with three pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and source pins.

Functional Features

• High Efficiency: Enables energy-efficient operation in various electronic applications.
• Fast Switching: Facilitates rapid transition between on and off states, enhancing overall performance.
• Low On-Resistance: Minimizes power loss and heat generation during operation.

Advantages and Disadvantages

Advantages - High efficiency - Fast switching speed - Low on-resistance

Disadvantages - Sensitivity to static electricity - Gate capacitance may affect high-frequency performance

Working Principles

The SISH110DN-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow from the drain to the source, effectively acting as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

This MOSFET is widely used in various applications such as: - Power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

• SIHG110N60E-GE3: Similar specifications with a higher voltage rating of 600V.
• SISH111DN-T1-GE3: Lower on-resistance at 3.2mΩ for improved efficiency.

In conclusion, the SISH110DN-T1-GE3 power MOSFET offers high efficiency, fast switching, and low on-resistance, making it suitable for a wide range of electronic applications. Its working principles and detailed application field plans demonstrate its versatility and importance in modern electronic design.

Word Count: 306