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SIHJ10N60E-T1-GE3
Introduction
The SIHJ10N60E-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Electronic applications requiring high power switching
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-220AB
- Essence: Efficient power management
- Packaging/Quantity: Available in reels or tubes, quantity varies based on supplier
Specifications
- Voltage Rating: 600V
- Current Rating: 10A
- On-Resistance: 0.65Ω
- Gate Charge: 16nC
- Operating Temperature: -55°C to 150°C
- Mounting Type: Through Hole
Detailed Pin Configuration
The SIHJ10N60E-T1-GE3 features a standard TO-220AB pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High voltage capability allows for use in various power applications
- Low on-resistance minimizes power loss and improves efficiency
- Fast switching speed enables rapid control of power flow
Advantages and Disadvantages
Advantages
- Efficient power management
- Suitable for high power switching applications
- Low power dissipation
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The SIHJ10N60E-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When the gate voltage is applied, the MOSFET switches on, allowing current to flow through.
Detailed Application Field Plans
The SIHJ10N60E-T1-GE3 is widely used in the following applications: - Switched-mode power supplies - Motor control - Inverters - LED lighting - Solar inverters
Detailed and Complete Alternative Models
- IRF840: Similar voltage and current ratings
- FQP30N06L: Lower voltage rating but suitable for lower power applications
- STP16NF06: Comparable specifications with different packaging options
In conclusion, the SIHJ10N60E-T1-GE3 power MOSFET offers efficient power management and is well-suited for high power switching applications across various industries.
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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SIHJ10N60E-T1-GE3 în soluțiile tehnice
Sure, here are 10 common questions and answers related to the application of SIHJ10N60E-T1-GE3 in technical solutions:
What is the maximum drain current of SIHJ10N60E-T1-GE3?
- The maximum drain current is 10A.
What is the voltage rating of SIHJ10N60E-T1-GE3?
- The voltage rating is 600V.
Can SIHJ10N60E-T1-GE3 be used in high-frequency applications?
- Yes, it is suitable for high-frequency applications.
What is the typical on-resistance of SIHJ10N60E-T1-GE3?
- The typical on-resistance is 0.65 ohms.
Is SIHJ10N60E-T1-GE3 suitable for power supply designs?
- Yes, it is commonly used in power supply designs.
Does SIHJ10N60E-T1-GE3 require a heat sink for thermal management?
- It depends on the specific application and power dissipation requirements, but a heat sink may be necessary for some applications.
What type of package does SIHJ10N60E-T1-GE3 come in?
- It comes in a TO-220AB package.
Can SIHJ10N60E-T1-GE3 be used in motor control applications?
- Yes, it is suitable for motor control applications.
What is the gate-source threshold voltage of SIHJ10N60E-T1-GE3?
- The gate-source threshold voltage is typically around 2.5V.
Is SIHJ10N60E-T1-GE3 RoHS compliant?
- Yes, it is RoHS compliant, making it suitable for environmentally conscious designs.
I hope these questions and answers are helpful for your technical solutions! Let me know if you need further assistance.