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SIHF12N50C-E3
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SIHF12N50C-E3

Product Overview

Category

The SIHF12N50C-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHF12N50C-E3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 12A
  • On-Resistance (RDS(on)): 0.65Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 24nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHF12N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching circuits.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for responsive performance

Disadvantages

  • May require additional circuitry for driving the gate due to high gate-source voltage

Working Principles

The SIHF12N50C-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supply Applications

The MOSFET can be used in various power supply designs, including switch-mode power supplies and DC-DC converters.

Motor Control

Its fast switching speed and high voltage capability make it suitable for motor control applications, such as inverter drives and motor control units.

High-Power Switching Circuits

In high-power switching circuits, the MOSFET can efficiently handle large currents and voltages, making it ideal for applications like industrial automation and power distribution systems.

Detailed and Complete Alternative Models

  • IRF840
  • STP16NF06L
  • FQP30N06L
  • IRL540

In conclusion, the SIHF12N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and control applications. While it may require additional considerations for gate driving, its performance advantages make it a popular choice in various electronic systems.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SIHF12N50C-E3 în soluțiile tehnice

  1. What is the maximum drain-source voltage of SIHF12N50C-E3?

    • The maximum drain-source voltage of SIHF12N50C-E3 is 500V.

  2. What is the continuous drain current rating of SIHF12N50C-E3?

    • The continuous drain current rating of SIHF12N50C-E3 is 12A.

  3. What is the on-state resistance (RDS(on)) of SIHF12N50C-E3?

    • The on-state resistance (RDS(on)) of SIHF12N50C-E3 is typically 0.55 ohms.

  4. Can SIHF12N50C-E3 be used in high-frequency switching applications?

    • Yes, SIHF12N50C-E3 can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.

  5. Is SIHF12N50C-E3 suitable for use in power supplies?

    • Yes, SIHF12N50C-E3 is suitable for use in power supplies, particularly in applications where high voltage and current handling capabilities are required.

  6. What type of package does SIHF12N50C-E3 come in?

    • SIHF12N50C-E3 comes in a TO-220AB package.

  7. Does SIHF12N50C-E3 require a heatsink for proper thermal management?

    • Depending on the application and power dissipation, a heatsink may be required for proper thermal management when using SIHF12N50C-E3.

  8. What is the typical gate charge of SIHF12N50C-E3?

    • The typical gate charge of SIHF12N50C-E3 is 20nC.

  9. Can SIHF12N50C-E3 be used in automotive applications?

    • Yes, SIHF12N50C-E3 is suitable for use in automotive applications, provided it meets the specific requirements and standards for automotive components.

  10. What are some common protection measures when using SIHF12N50C-E3 in circuit designs?

    • Common protection measures include overcurrent protection, overvoltage protection, and thermal management to ensure safe and reliable operation of SIHF12N50C-E3 in circuit designs.