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SI9434BDY-T1-GE3

SI9434BDY-T1-GE3

Introduction

The SI9434BDY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductor
  • Use: Power MOSFET for electronic applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

  • Voltage - Drain-Source Breakdown (Max): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 3300pF @ 15V

Detailed Pin Configuration

The SI9434BDY-T1-GE3 features a standard pin configuration with clear labeling for easy integration into circuit designs.

Functional Features

  • High Efficiency: Enables energy-efficient operation in power management systems.
  • Low On-Resistance: Reduces power losses and enhances overall system performance.
  • Fast Switching Speed: Facilitates rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to overvoltage conditions
  • Requires careful thermal management in high-power applications

Working Principles

The SI9434BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow within electronic circuits.

Detailed Application Field Plans

This power MOSFET is commonly employed in various applications, including: - DC-DC converters - Motor control systems - Power supplies - LED lighting

Detailed and Complete Alternative Models

  • SI9434BDY-T1-E3: Similar specifications and characteristics
  • SI9434BDY-T1-RE3: Enhanced thermal performance variant
  • SI9434BDY-T1-WE3: Wide temperature range version

In conclusion, the SI9434BDY-T1-GE3 power MOSFET offers high efficiency, low on-resistance, and fast switching speed, making it an ideal choice for diverse electronic applications requiring efficient power management and control.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SI9434BDY-T1-GE3 în soluțiile tehnice

  1. What is the maximum operating voltage of SI9434BDY-T1-GE3?

    • The maximum operating voltage of SI9434BDY-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI9434BDY-T1-GE3?

    • The typical on-resistance of SI9434BDY-T1-GE3 is 18mΩ.
  3. What is the maximum continuous drain current of SI9434BDY-T1-GE3?

    • The maximum continuous drain current of SI9434BDY-T1-GE3 is 40A.
  4. What is the gate threshold voltage of SI9434BDY-T1-GE3?

    • The gate threshold voltage of SI9434BDY-T1-GE3 is typically 1V.
  5. What is the package type of SI9434BDY-T1-GE3?

    • SI9434BDY-T1-GE3 comes in a D2PAK-7 package.
  6. What is the typical input capacitance of SI9434BDY-T1-GE3?

    • The typical input capacitance of SI9434BDY-T1-GE3 is 3700pF.
  7. What is the maximum junction temperature of SI9434BDY-T1-GE3?

    • The maximum junction temperature of SI9434BDY-T1-GE3 is 175°C.
  8. Is SI9434BDY-T1-GE3 suitable for automotive applications?

    • Yes, SI9434BDY-T1-GE3 is suitable for automotive applications.
  9. What is the typical turn-on delay time of SI9434BDY-T1-GE3?

    • The typical turn-on delay time of SI9434BDY-T1-GE3 is 10ns.
  10. Does SI9434BDY-T1-GE3 have overcurrent protection?

    • Yes, SI9434BDY-T1-GE3 features overcurrent protection.