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SI9434BDY-T1-GE3
Introduction
The SI9434BDY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Discrete Semiconductor
- Use: Power MOSFET for electronic applications
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: DFN (Dual Flat No-Lead)
- Essence: Efficient power management and control
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier
Specifications
- Voltage - Drain-Source Breakdown (Max): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) @ Vds: 3300pF @ 15V
Detailed Pin Configuration
The SI9434BDY-T1-GE3 features a standard pin configuration with clear labeling for easy integration into circuit designs.
Functional Features
- High Efficiency: Enables energy-efficient operation in power management systems.
- Low On-Resistance: Reduces power losses and enhances overall system performance.
- Fast Switching Speed: Facilitates rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High efficiency
- Low on-resistance
- Fast switching speed
Disadvantages
- Sensitive to overvoltage conditions
- Requires careful thermal management in high-power applications
Working Principles
The SI9434BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow within electronic circuits.
Detailed Application Field Plans
This power MOSFET is commonly employed in various applications, including:
- DC-DC converters
- Motor control systems
- Power supplies
- LED lighting
Detailed and Complete Alternative Models
- SI9434BDY-T1-E3: Similar specifications and characteristics
- SI9434BDY-T1-RE3: Enhanced thermal performance variant
- SI9434BDY-T1-WE3: Wide temperature range version
In conclusion, the SI9434BDY-T1-GE3 power MOSFET offers high efficiency, low on-resistance, and fast switching speed, making it an ideal choice for diverse electronic applications requiring efficient power management and control.
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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui SI9434BDY-T1-GE3 în soluțiile tehnice
What is the maximum operating voltage of SI9434BDY-T1-GE3?
- The maximum operating voltage of SI9434BDY-T1-GE3 is 30V.
What is the typical on-resistance of SI9434BDY-T1-GE3?
- The typical on-resistance of SI9434BDY-T1-GE3 is 18mΩ.
What is the maximum continuous drain current of SI9434BDY-T1-GE3?
- The maximum continuous drain current of SI9434BDY-T1-GE3 is 40A.
What is the gate threshold voltage of SI9434BDY-T1-GE3?
- The gate threshold voltage of SI9434BDY-T1-GE3 is typically 1V.
What is the package type of SI9434BDY-T1-GE3?
- SI9434BDY-T1-GE3 comes in a D2PAK-7 package.
What is the typical input capacitance of SI9434BDY-T1-GE3?
- The typical input capacitance of SI9434BDY-T1-GE3 is 3700pF.
What is the maximum junction temperature of SI9434BDY-T1-GE3?
- The maximum junction temperature of SI9434BDY-T1-GE3 is 175°C.
Is SI9434BDY-T1-GE3 suitable for automotive applications?
- Yes, SI9434BDY-T1-GE3 is suitable for automotive applications.
What is the typical turn-on delay time of SI9434BDY-T1-GE3?
- The typical turn-on delay time of SI9434BDY-T1-GE3 is 10ns.
Does SI9434BDY-T1-GE3 have overcurrent protection?
- Yes, SI9434BDY-T1-GE3 features overcurrent protection.