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STB100N6F7
Product Category
The STB100N6F7 belongs to the category of power MOSFETs.
Basic Information Overview
- Category: Power MOSFET
- Use: The STB100N6F7 is used as a high-voltage, N-channel enhancement-mode power MOSFET designed for applications such as switch mode power supplies and motor control.
- Characteristics: It features low on-state resistance, fast switching speed, and high input impedance.
- Package: The STB100N6F7 is available in a TO-263 package.
- Essence: Its essence lies in providing efficient power management and control in various electronic applications.
- Packaging/Quantity: Typically packaged in reels, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 60V
- Current Rating: 100A
- On-State Resistance: 6mΩ
- Gate Threshold Voltage: 2V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The STB100N6F7 typically has three pins: 1. Gate (G): Input pin for controlling the switching of the MOSFET. 2. Drain (D): Output pin through which the current flows when the MOSFET is in the on-state. 3. Source (S): Connected to the ground or return path for the current.
Functional Features
- High voltage capability
- Low input capacitance
- Avalanche energy specified
- Logic level gate drive capability
Advantages and Disadvantages
Advantages: - Low on-state resistance - Fast switching speed - High input impedance - Suitable for high-power applications
Disadvantages: - Higher cost compared to standard MOSFETs - Requires careful handling due to sensitivity to static electricity
Working Principles
The STB100N6F7 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STB100N6F7 is commonly used in: - Switch mode power supplies - Motor control circuits - Power management systems - Inverters and converters
Detailed and Complete Alternative Models
Some alternative models to the STB100N6F7 include: - IRF1405 - FDP8878 - IPP60R190C6
This completes the entry for the STB100N6F7 power MOSFET, covering its product category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui STB100N6F7 în soluțiile tehnice
What is the maximum drain-source voltage for STB100N6F7?
- The maximum drain-source voltage for STB100N6F7 is 60V.
What is the continuous drain current rating for STB100N6F7?
- The continuous drain current rating for STB100N6F7 is 100A.
What is the on-state resistance (RDS(on)) of STB100N6F7?
- The on-state resistance (RDS(on)) of STB100N6F7 is typically 7mΩ at VGS = 10V.
Can STB100N6F7 be used in automotive applications?
- Yes, STB100N6F7 is suitable for automotive applications.
What is the operating temperature range for STB100N6F7?
- The operating temperature range for STB100N6F7 is -55°C to 175°C.
Does STB100N6F7 require a heat sink for high-power applications?
- Yes, for high-power applications, it is recommended to use a heat sink with STB100N6F7.
Is STB100N6F7 RoHS compliant?
- Yes, STB100N6F7 is RoHS compliant.
What is the gate threshold voltage for STB100N6F7?
- The gate threshold voltage for STB100N6F7 is typically 2.5V.
Can STB100N6F7 be used in switching power supplies?
- Yes, STB100N6F7 can be used in switching power supply applications.
What package type is STB100N6F7 available in?
- STB100N6F7 is available in a TO-263 (D2PAK) package.