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NB3F8L3010CMNTWG

NB3F8L3010CMNTWG

Basic Information Overview

  • Category: Electronic Component
  • Use: Signal Amplification and Switching
  • Characteristics: High Gain, Low Noise, Fast Switching Speed
  • Package: Surface Mount Technology (SMT)
  • Essence: Transistor
  • Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications and Parameters

  • Type: NPN Transistor
  • Collector Current: 100mA
  • Collector-Emitter Voltage: 30V
  • Emitter-Base Voltage: 5V
  • Power Dissipation: 200mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

  1. Base
  2. Emitter
  3. Collector

Functional Characteristics

  • High current gain
  • Low noise figure
  • Fast switching speed
  • Suitable for low-power applications

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification - Low noise figure ensures minimal interference - Fast switching speed enables quick response time

Disadvantages: - Limited power dissipation capability - Narrow operating temperature range

Applicable Range of Products

  • Audio amplifiers
  • RF amplifiers
  • Switching circuits
  • Oscillators

Working Principles

The NB3F8L3010CMNTWG is a NPN transistor that operates based on the principles of bipolar junction transistors (BJTs). It consists of three layers of semiconductor material - the emitter, base, and collector. By applying a small current or voltage to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

  1. Audio Amplifier Circuit: Utilize the transistor's high gain and low noise characteristics to amplify audio signals with minimal distortion.
  2. RF Amplifier Circuit: Take advantage of the transistor's high frequency response and low noise figure to amplify radio frequency signals in communication systems.
  3. Switching Circuit: Utilize the fast switching speed of the transistor to control the flow of current in electronic switches.
  4. Oscillator Circuit: Utilize the transistor's ability to generate oscillations for applications such as signal generation or frequency modulation.

Detailed Alternative Models

  • NB3F8L3010DMNTWG
  • NB3F8L3010EMNTWG
  • NB3F8L3010FMNTWG

5 Common Technical Questions and Answers

  1. Q: What is the maximum collector current of NB3F8L3010CMNTWG? A: The maximum collector current is 100mA.

  2. Q: What is the operating temperature range of NB3F8L3010CMNTWG? A: The operating temperature range is -55°C to +150°C.

  3. Q: Can NB3F8L3010CMNTWG be used in high-power applications? A: No, it is suitable for low-power applications due to its limited power dissipation capability.

  4. Q: What is the package type of NB3F8L3010CMNTWG? A: It is packaged using Surface Mount Technology (SMT).

  5. Q: What is the transition frequency of NB3F8L3010CMNTWG? A: The transition frequency is 250MHz.

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