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PDTA123EM,315
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PDTA123EM,315

Product Overview

Category

PDTA123EM,315 belongs to the category of small signal transistors.

Use

It is commonly used in low-power amplification and switching applications.

Characteristics

PDTA123EM,315 is characterized by its small size, low power consumption, and high reliability.

Package

The product comes in a SOT416 (SC-75) package.

Essence

PDTA123EM,315 is essential for amplifying and switching small signals in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Type: NPN
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 200mW
  • Transition Frequency (ft): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • Small size for space-constrained applications
  • Low power consumption
  • High transition frequency for fast switching applications

Advantages

  • Compact size
  • Low power consumption
  • High reliability

Disadvantages

  • Limited collector current compared to larger transistors
  • Limited power dissipation capability

Working Principles

PDTA123EM,315 operates based on the principles of bipolar junction transistors, where the flow of current between the emitter and collector is controlled by the base current.

Detailed Application Field Plans

PDTA123EM,315 is suitable for use in various low-power amplification and switching applications, including: - Audio amplifiers - Signal amplification in sensor circuits - Switching small loads in control circuits

Detailed and Complete Alternative Models

  • BC847B,215
  • MMBT3904LT1G
  • 2N3904

In conclusion, PDTA123EM,315 is a small signal transistor with compact size, low power consumption, and high reliability, making it suitable for various low-power amplification and switching applications.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui PDTA123EM,315 în soluțiile tehnice

  1. What is PDTA123EM,315?

    • PDTA123EM,315 is a high-performance NPN resistor-equipped transistor in a small SOT883B Surface-Mounted Device (SMD) plastic package.

  2. What are the typical applications of PDTA123EM,315?

    • Typical applications include high-speed switching and amplification in various technical solutions such as portable electronics, battery management systems, and sensor interfaces.

  3. What is the maximum collector current of PDTA123EM,315?

    • The maximum collector current is 100 mA.

  4. What is the maximum power dissipation of PDTA123EM,315?

    • The maximum power dissipation is 150 mW.

  5. What is the voltage rating for PDTA123EM,315?

    • The voltage rating is 50 V.

  6. What are the key features of PDTA123EM,315?

    • Key features include low collector-emitter saturation voltage, high current gain, and low equivalent on-resistance.

  7. Can PDTA123EM,315 be used in high-frequency applications?

    • Yes, it can be used in high-frequency applications due to its high transition frequency.

  8. What are the thermal characteristics of PDTA123EM,315?

    • The thermal resistance from junction to ambient is 625 K/W.

  9. Is PDTA123EM,315 RoHS compliant?

    • Yes, PDTA123EM,315 is RoHS compliant, making it suitable for use in environmentally sensitive applications.

  10. Are there any recommended alternative components to PDTA123EM,315?

    • Some recommended alternatives include PDTA143EM,315 and PDTA113EM,315, which offer similar performance characteristics.