NAND08GW3F2AN6E

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • High capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Available in bulk or reel packaging

Specifications

• Capacity: 8 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The NAND08GW3F2AN6E has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. /CE: Chip enable (active low)
4. /WP: Write protect (active low)
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. /HOLD: Hold input (active low)

Functional Features

• Page Program Operation: Allows programming of data in page increments
• Block Erase Operation: Enables erasing of data in block increments
• Random Access: Supports random access to any memory location
• Error Correction Code (ECC): Provides data integrity and error detection/correction
• Bad Block Management: Includes mechanisms to handle defective blocks

Advantages and Disadvantages

Advantages: - High storage capacity - Fast data transfer rates - Low power consumption - Compact package size - Reliable data retention

Disadvantages: - Limited endurance compared to other memory technologies - Relatively higher cost per gigabyte compared to alternative models

Working Principles

The NAND08GW3F2AN6E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, the device uses a combination of voltage levels and control signals to access specific memory locations.

Detailed Application Field Plans

The NAND08GW3F2AN6E is widely used in various electronic devices that require non-volatile storage, such as: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players

Detailed and Complete Alternative Models

1. NAND16GW3F2AN6E: 16GB capacity, similar specifications
2. NAND32GW3F2AN6E: 32GB capacity, similar specifications
3. NAND64GW3F2AN6E: 64GB capacity, similar specifications

These alternative models offer increased storage capacities while maintaining compatibility with the NAND08GW3F2AN6E in terms of pin configuration and functionality.

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