N25Q128A23BSF40F TR

Product Overview

Category

The N25Q128A23BSF40F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The N25Q128A23BSF40F TR retains stored data even when power is removed.
• High capacity: With a storage capacity of 128 megabits (16 megabytes), it can accommodate large amounts of data.
• Fast access times: The device offers low latency and high-speed read and write operations.
• Reliable: It has built-in error correction mechanisms to ensure data integrity.
• Low power consumption: The N25Q128A23BSF40F TR is designed to minimize energy usage.

Package and Quantity

The N25Q128A23BSF40F TR is available in a small form factor package, typically measuring 8mm x 6mm. It is commonly supplied in tape and reel packaging, with quantities varying based on customer requirements.

Specifications

• Memory Capacity: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: Up to 20 years

Pin Configuration

The N25Q128A23BSF40F TR features a standard 8-pin Dual In-line Package (DIP) configuration. The pinout is as follows:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed Read and Write Operations: The N25Q128A23BSF40F TR offers fast data transfer rates, enabling quick access to stored information.
• Sector Erase and Program: It supports sector-based erase and program operations, allowing efficient management of data.
• Advanced Security Features: This device incorporates hardware-based security features, such as password protection and secure erase, to safeguard sensitive data.
• Flexible Architecture: The memory can be divided into multiple sectors, providing flexibility in organizing and accessing data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable data retention
• Secure data protection features

Disadvantages

• Limited write endurance compared to some other non-volatile memory technologies
• Relatively higher cost per bit compared to certain alternative memory solutions

Working Principles

The N25Q128A23BSF40F TR utilizes flash memory technology to store data. It employs a floating-gate transistor structure that allows for non-volatile storage of electrical charges. When data is written, the charge is trapped in the floating gate, preserving the information even when power is removed. During read operations, the stored charge is measured to determine the stored data.

Application Field Plans

The N25Q128A23BSF40F TR finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Networking equipment - Medical devices

Alternative Models

1. N25Q064A13ESF40E TR: 64 megabit (8 megabyte) capacity, similar specifications.
2. N25Q256A13EF840E TR: 256 megabit (32 megabyte) capacity, higher storage capacity.
3. N25Q512A23EF840F TR: 512 megabit (64 megabyte) capacity, higher storage capacity.

These alternative models offer different storage capacities to cater to diverse application requirements.

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