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MT47H64M16HR-25E XIT:H TR
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MT47H64M16HR-25E XIT:H TR

Product Overview

Category

The MT47H64M16HR-25E XIT:H TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed performance: The MT47H64M16HR-25E XIT:H TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
  • Large capacity: With a capacity of 64 megabits (8 megabytes), this memory module can store a significant amount of data.
  • Low power consumption: The product is designed to operate efficiently while consuming minimal power.
  • Reliable operation: It features robust construction and advanced error correction techniques, ensuring data integrity and system stability.

Package and Quantity

The MT47H64M16HR-25E XIT:H TR is packaged in a compact and durable form factor, suitable for surface mounting on printed circuit boards (PCBs). It is available in tape and reel packaging, with a standard quantity of 250 units per reel.

Specifications

  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Organization: 64 megabits x 16 bits
  • Operating Voltage: 2.5V
  • Clock Frequency: 400 MHz
  • Data Transfer Rate: 800 Mbps
  • Latency: CL = 3
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 96-ball FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MT47H64M16HR-25E XIT:H TR has a total of 96 pins arranged in a fine-pitch ball grid array configuration. The pinout diagram and corresponding functions are as follows:

| Pin Number | Function | |------------|----------| | 1 | VDD | | 2 | DQ0 | | 3 | DQ1 | | ... | ... | | 96 | VSS |

Functional Features

  • Burst Mode Operation: The memory module supports burst mode, allowing for efficient consecutive data access.
  • Auto Precharge: It automatically precharges the memory cells after a read or write operation, optimizing performance.
  • On-Die Termination (ODT): This feature reduces signal reflections and improves signal integrity by matching the impedance of the memory bus.
  • Self-Refresh Mode: The product can enter a low-power self-refresh mode to conserve energy when not actively accessed.

Advantages and Disadvantages

Advantages

  • High-speed performance enables faster data processing.
  • Large capacity allows for storing substantial amounts of information.
  • Low power consumption contributes to energy efficiency.
  • Reliable operation ensures data integrity and system stability.

Disadvantages

  • Limited compatibility with older devices that do not support SDRAM technology.
  • Higher cost compared to alternative memory technologies.

Working Principles

The MT47H64M16HR-25E XIT:H TR operates based on synchronous dynamic random access memory (SDRAM) principles. It stores data in an array of capacitors, which are periodically refreshed to maintain the stored information. The memory controller synchronizes data transfers with the clock signal, enabling high-speed access.

Detailed Application Field Plans

The MT47H64M16HR-25E XIT:H TR is widely used in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

  • MT47H64M16HR-25E XIT:H
  • MT47H64M16HR-25E XIT:G
  • MT47H64M16HR-25E XIT:F
  • MT47H64M16HR-25E XIT:E

These alternative models offer similar specifications and functionality, providing flexibility for different application requirements.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui MT47H64M16HR-25E XIT:H TR în soluțiile tehnice

Sure! Here are 10 common questions and answers related to the application of MT47H64M16HR-25E XIT:H TR in technical solutions:

  1. Question: What is the capacity of the MT47H64M16HR-25E XIT:H TR memory module?
    Answer: The MT47H64M16HR-25E XIT:H TR has a capacity of 64 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H64M16HR-25E XIT:H TR is 2.5V.

  3. Question: What is the clock frequency supported by this memory module?
    Answer: The MT47H64M16HR-25E XIT:H TR supports a clock frequency of 400 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H64M16HR-25E XIT:H TR is a DDR3 SDRAM memory module.

  5. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT47H64M16HR-25E XIT:H TR can be used in both laptops and desktop computers that support DDR3 memory.

  6. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT47H64M16HR-25E XIT:H TR is 9.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H64M16HR-25E XIT:H TR does not support ECC.

  8. Question: Can I use multiple MT47H64M16HR-25E XIT:H TR modules together?
    Answer: Yes, you can use multiple modules to increase the total memory capacity of your system.

  9. Question: What is the form factor of this memory module?
    Answer: The MT47H64M16HR-25E XIT:H TR has a 96-ball FBGA (Fine-pitch Ball Grid Array) form factor.

  10. Question: Is this memory module suitable for high-performance applications?
    Answer: Yes, the MT47H64M16HR-25E XIT:H TR is designed for high-performance computing and can be used in various technical solutions.

Please note that these answers are based on general information about the MT47H64M16HR-25E XIT:H TR memory module. For specific technical details and compatibility, it is recommended to refer to the manufacturer's documentation or consult with a technical expert.