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MT47H512M4EB-3:C
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MT47H512M4EB-3:C

Product Overview

Category

MT47H512M4EB-3:C belongs to the category of semiconductor memory products.

Use

This product is primarily used as a dynamic random-access memory (DRAM) module in various electronic devices and systems.

Characteristics

  • High-speed data transfer capabilities
  • Large storage capacity
  • Low power consumption
  • Compact form factor
  • Reliable performance

Package

MT47H512M4EB-3:C is typically packaged in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval for electronic devices.

Packaging/Quantity

MT47H512M4EB-3:C is usually sold in individual units or in bulk packaging, depending on the customer's requirements.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 512 Megabytes (MB)
  • Organization: 4 Megabits x 16
  • Speed: 1333 Megatransfers per second (MT/s)
  • Voltage: 1.5 Volts
  • Operating Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT47H512M4EB-3:C is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A10
  21. A9
  22. A11
  23. BA0
  24. BA1
  25. A8
  26. A7
  27. A6
  28. A5
  29. A4
  30. A3
  31. A2
  32. A1
  33. A0
  34. VSS
  35. WE#
  36. CAS#
  37. RAS#
  38. CS#
  39. CKE
  40. CK

Functional Features

  • High-speed data transfer rate for improved system performance.
  • Low power consumption, making it suitable for battery-powered devices.
  • Error correction capabilities to ensure data integrity.
  • Auto-refresh and self-refresh modes for efficient power management.
  • On-die termination (ODT) for improved signal integrity.

Advantages and Disadvantages

Advantages

  • Fast data transfer speed enhances overall system performance.
  • Large storage capacity allows for storing a significant amount of data.
  • Low power consumption prolongs battery life in portable devices.
  • Compact form factor enables easy integration into various electronic systems.
  • Reliable performance ensures data integrity and system stability.

Disadvantages

  • Limited compatibility with older systems that do not support DDR3 memory.
  • Higher cost compared to older generation memory technologies.
  • Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

MT47H512M4EB-3:C operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When the system requires access to specific data, the memory controller sends appropriate signals to retrieve or store the required information.

Detailed Application Field Plans

MT47H512M4EB-3:C finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Gaming consoles - Mobile devices - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H512M4EB-3:C are: - MT47H256M8EB-3:C - MT47H1G16EB-3:C - MT47H128M16RT-25E:A

These models offer different capacities, organizations, or speeds, providing flexibility to meet specific system requirements.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui MT47H512M4EB-3:C în soluțiile tehnice

Sure! Here are 10 common questions and answers related to the application of MT47H512M4EB-3:C in technical solutions:

  1. Q: What is MT47H512M4EB-3:C? A: MT47H512M4EB-3:C is a specific model of DDR3 SDRAM memory module commonly used in various technical solutions.

  2. Q: What is the capacity of MT47H512M4EB-3:C? A: The MT47H512M4EB-3:C has a capacity of 512 megabytes (MB).

  3. Q: What is the speed rating of MT47H512M4EB-3:C? A: The MT47H512M4EB-3:C operates at a speed of 800 megahertz (MHz).

  4. Q: What is the voltage requirement for MT47H512M4EB-3:C? A: The MT47H512M4EB-3:C requires a voltage of 1.5 volts (V) for proper operation.

  5. Q: Can MT47H512M4EB-3:C be used in laptops or desktop computers? A: Yes, MT47H512M4EB-3:C can be used in both laptops and desktop computers, as long as they support DDR3 SDRAM.

  6. Q: Is MT47H512M4EB-3:C compatible with other memory modules? A: Yes, MT47H512M4EB-3:C is compatible with other DDR3 SDRAM memory modules, as long as they have similar specifications.

  7. Q: What is the form factor of MT47H512M4EB-3:C? A: MT47H512M4EB-3:C follows the Small Outline Dual In-Line Memory Module (SO-DIMM) form factor.

  8. Q: Can MT47H512M4EB-3:C be used in server applications? A: Yes, MT47H512M4EB-3:C can be used in server applications that support DDR3 SDRAM memory modules.

  9. Q: What is the operating temperature range for MT47H512M4EB-3:C? A: The operating temperature range for MT47H512M4EB-3:C is typically between 0°C and 85°C.

  10. Q: Is MT47H512M4EB-3:C suitable for high-performance computing applications? A: While MT47H512M4EB-3:C is a reliable memory module, it may not be ideal for high-performance computing applications that require larger capacities or higher speeds.

Please note that the answers provided here are general and may vary depending on specific technical requirements and compatibility with other components in a given solution.