Micron Technology Inc.
Imaginea poate fi reprezentativă.
Consultați specificațiile pentru detalii despre produs.
MT47H128M8CF-25E IT:H TR
Vezi detalii Foi de date

MT47H128M8CF-25E IT:H TR

Product Overview

Category

MT47H128M8CF-25E IT:H TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

  • High-speed data access
  • Volatile memory
  • Large storage capacity
  • Low power consumption
  • Compact size

Package

MT47H128M8CF-25E IT:H TR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

MT47H128M8CF-25E IT:H TR is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Memory Type: Dynamic Random-Access Memory (DRAM)
  • Capacity: 128 Megabits (16 Megabytes)
  • Organization: 128M x 8
  • Speed: 25E (DDR3-1600)
  • Operating Voltage: 1.5V
  • Interface: Parallel
  • Package Type: TSOP (Thin Small Outline Package)
  • Temperature Range: Industrial (-40°C to +85°C)

Detailed Pin Configuration

The pin configuration of MT47H128M8CF-25E IT:H TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDD
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VDD
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. VSS
  45. CLK
  46. CKE
  47. DQM0
  48. DQM1
  49. DM0
  50. DM1
  51. VDD
  52. ODT

Functional Features

  • High-speed data access: MT47H128M8CF-25E IT:H TR offers fast read and write operations, enabling efficient data processing.
  • Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Reliable performance: The DRAM technology used in this chip ensures reliable and stable memory operations.
  • Easy integration: MT47H128M8CF-25E IT:H TR can be easily integrated into various electronic devices due to its compact size and standard interface.

Advantages and Disadvantages

Advantages

  • Fast data access speeds
  • Large storage capacity
  • Low power consumption
  • Compact size for easy integration
  • Reliable performance

Disadvantages

  • Volatile memory (data loss upon power loss)
  • Limited temperature range for operation

Working Principles

MT47H128M8CF-25E IT:H TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. The chip communicates with the device's controller through a parallel interface, allowing for efficient data transfer.

Detailed Application Field Plans

MT47H128M8CF-25E IT:H TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H128M8CF-25E IT:H TR are: - MT47H64M16HR-25E IT:H TR - MT47H256M8EB-25E IT:H TR - MT47H512M4EB-25E IT:H TR - MT47H1G8FB-25E IT:H TR

These alternative models offer similar functionality and characteristics, but

Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui MT47H128M8CF-25E IT:H TR în soluțiile tehnice

Sure! Here are 10 common questions and answers related to the application of MT47H128M8CF-25E IT:H TR in technical solutions:

  1. Question: What is the capacity of the MT47H128M8CF-25E IT:H TR memory module?
    Answer: The MT47H128M8CF-25E IT:H TR has a capacity of 128 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H128M8CF-25E IT:H TR is 2.5V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT47H128M8CF-25E IT:H TR supports a maximum clock frequency of 400 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H128M8CF-25E IT:H TR is a DDR3 SDRAM memory module.

  5. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT47H128M8CF-25E IT:H TR can be used in both laptops and desktop computers that support DDR3 memory.

  6. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT47H128M8CF-25E IT:H TR is 9.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H128M8CF-25E IT:H TR does not support ECC.

  8. Question: Can I install multiple MT47H128M8CF-25E IT:H TR modules in my system?
    Answer: Yes, you can install multiple modules to increase the total memory capacity of your system.

  9. Question: What is the form factor of this memory module?
    Answer: The MT47H128M8CF-25E IT:H TR has a 240-pin DIMM (Dual In-Line Memory Module) form factor.

  10. Question: Is this memory module compatible with both Intel and AMD platforms?
    Answer: Yes, the MT47H128M8CF-25E IT:H TR is compatible with both Intel and AMD platforms that support DDR3 memory.

Please note that these answers are specific to the MT47H128M8CF-25E IT:H TR memory module and may not apply to other similar products.