MT41K128M16JT-125 M:K TR

Product Overview

Category

The MT41K128M16JT-125 M:K TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used as a high-speed volatile memory component in various electronic devices, such as computers, servers, and networking equipment.

Characteristics

• High-speed operation: The MT41K128M16JT-125 M:K TR offers fast data access and transfer rates, making it suitable for demanding applications.
• Large capacity: With a capacity of 128 megabits (16 megabytes), this module provides ample storage space for data-intensive tasks.
• Low power consumption: The product is designed to operate efficiently while consuming minimal power.
• Reliable performance: It offers stable and reliable performance, ensuring data integrity and system stability.

Package and Quantity

The MT41K128M16JT-125 M:K TR is typically packaged in a small form factor, such as a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Memory Type: DDR3 SDRAM
• Organization: 128M words x 16 bits
• Operating Voltage: 1.35V
• Speed Grade: 125 MHz
• Refresh Rate: 8K cycles/32ms
• Interface: Double Data Rate (DDR)
• Pin Count: 96 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT41K128M16JT-125 M:K TR module has a total of 96 pins. The pin configuration is as follows:

(Pin diagram goes here)

Functional Features

• High-speed data transfer: The module supports high-speed data transfer rates, enabling efficient processing of large amounts of data.
• Error correction: It incorporates error correction code (ECC) functionality to detect and correct memory errors, enhancing data reliability.
• Auto-refresh capability: The module automatically refreshes the stored data at regular intervals, ensuring data integrity over extended periods.
• Burst mode operation: It supports burst mode access, allowing for faster consecutive data retrieval.

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing.
• Large capacity provides ample storage space for demanding applications.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility: The MT41K128M16JT-125 M:K TR is designed specifically for DDR3-compatible systems and may not be compatible with older or newer memory standards.
• Relatively higher cost compared to lower-capacity memory modules.

Working Principles

The MT41K128M16JT-125 M:K TR operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. To read or write data, the module applies electrical charges to the appropriate capacitors, altering their states accordingly.

Detailed Application Field Plans

The MT41K128M16JT-125 M:K TR is widely used in various applications, including: - Personal computers and laptops - Servers and data centers - Networking equipment - Graphics processing units (GPUs) - Embedded systems and industrial automation

Alternative Models

Several alternative models are available that offer similar functionality and specifications to the MT41K128M16JT-125 M:K TR. Some notable alternatives include: - MT41K256M16TW-107 IT: A higher-capacity variant with 256 megabits (32 megabytes) and a lower operating voltage. - MT41K512M16HA-125 IT: A higher-capacity variant with 512 megabits (64 megabytes) and improved speed grade.

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the MT41K128M16JT-125 M:K TR is a high-speed, large-capacity DDR3 SDRAM module used in various electronic devices. It offers reliable performance, low power consumption, and efficient data transfer capabilities. While it has some limitations in terms of compatibility and cost, it remains a popular choice for memory-intensive applications.