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MT29FEN64GDKCAAXDQ-10:A TR

MT29FEN64GDKCAAXDQ-10:A TR

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics: Non-volatile, high capacity, fast access speed
  • Package: BGA (Ball Grid Array)
  • Essence: NAND Flash memory
  • Packaging/Quantity: Tape and Reel, 250 units per reel

Specifications

  • Model: MT29FEN64GDKCAAXDQ-10:A TR
  • Capacity: 64GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: 10 years

Detailed Pin Configuration

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. RE#
  31. WE#
  32. WP#
  33. R/B#
  34. CE#
  35. BYTE#
  36. DQ0
  37. DQ1
  38. DQ2
  39. DQ3
  40. DQ4
  41. DQ5
  42. DQ6
  43. DQ7
  44. DQ8
  45. DQ9
  46. DQ10
  47. DQ11
  48. DQ12
  49. DQ13
  50. DQ14
  51. DQ15
  52. VSS

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Wear-leveling algorithms for extended lifespan
  • Block erase and page program operations
  • Power-saving features
  • Bad block management

Advantages

  • Large storage capacity
  • Fast access speed
  • Non-volatile memory retains data even without power
  • Reliable and durable design
  • Suitable for various applications

Disadvantages

  • Higher cost compared to other memory technologies
  • Limited endurance compared to some other memory types
  • Requires specific programming and erasing procedures

Working Principles

MT29FEN64GDKCAAXDQ-10:A TR is based on NAND Flash memory technology. It stores data in a series of memory cells organized in blocks. Each cell can store multiple bits of information using a floating-gate transistor structure. The memory cells are arranged in a grid-like structure, allowing for efficient data storage and retrieval.

The device uses a parallel interface to communicate with the host system. It supports various commands for reading, writing, erasing, and managing the memory. The controller inside the device handles these operations, ensuring reliable data transfer and integrity.

Detailed Application Field Plans

MT29FEN64GDKCAAXDQ-10:A TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

  1. MT29FEN128GDKCAAXDQ-10:A TR - 128GB capacity
  2. MT29FEN32GDKCAAXDQ-10:A TR - 32GB capacity
  3. MT29FEN256GDKCAAXDQ-10:A TR - 256GB capacity
  4. MT29FEN512GDKCAAXDQ-10:A TR - 512GB capacity

These alternative models offer different storage capacities to suit specific application requirements.

Word count: 410 words

Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui MT29FEN64GDKCAAXDQ-10:A TR în soluțiile tehnice

1. What is the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR has a capacity of 64 gigabytes (GB).

3. What is the speed rating of the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR has a speed rating of 10 nanoseconds (ns).

4. What is the form factor of the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR follows the TSOP (Thin Small Outline Package) form factor.

5. What is the voltage requirement for the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR operates at a voltage of 3.3 volts (V).

6. What is the temperature range for the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR can operate within a temperature range of -40°C to +85°C.

7. What are some common applications of the MT29FEN64GDKCAAXDQ-10:A TR?

The MT29FEN64GDKCAAXDQ-10:A TR is commonly used in various electronic devices such as smartphones, tablets, solid-state drives (SSDs), and industrial applications.

8. Is the MT29FEN64GDKCAAXDQ-10:A TR compatible with other NAND flash memory chips?

Yes, the MT29FEN64GDKCAAXDQ-10:A TR is designed to be compatible with industry-standard NAND flash interfaces, allowing it to work with other compatible chips.

9. Can the MT29FEN64GDKCAAXDQ-10:A TR be used for data storage in automotive applications?

Yes, the MT29FEN64GDKCAAXDQ-10:A TR is suitable for use in automotive applications due to its wide temperature range and reliability.

10. What is the lifespan of the MT29FEN64GDKCAAXDQ-10:A TR?

The lifespan of the MT29FEN64GDKCAAXDQ-10:A TR depends on various factors such as usage patterns and operating conditions. However, it is designed to have a long lifespan and high endurance for reliable data storage.