MT29F64G08CECCBH1-12IT:C

Product Overview

Category

MT29F64G08CECCBH1-12IT:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CECCBH1-12IT:C offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08CECCBH1-12IT:C comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08CECCBH1-12IT:C NAND flash memory is typically packaged in surface mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Part Number: MT29F64G08CECCBH1-12IT:C
• Density: 64 gigabytes (GB)
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of MT29F64G08CECCBH1-12IT:C is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE#: Chip enable
4. RE#: Read enable
5. WE#: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B#: Ready/busy status output
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP#: Write protect
12. RST#: Reset

Functional Features

• Page Program: MT29F64G08CECCBH1-12IT:C supports page programming, allowing data to be written in small increments.
• Block Erase: It provides block erase functionality, enabling the deletion of large chunks of data.
• Random Access: The NAND flash memory allows for random access to specific memory locations, facilitating efficient data retrieval.
• Wear-Leveling: This feature ensures even distribution of write and erase operations across the memory cells, prolonging the product's lifespan.
• Error Correction: MT29F64G08CECCBH1-12IT:C incorporates advanced error correction techniques to enhance data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life.
• Compact package enables easy integration into various devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F64G08CECCBH1-12IT:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing data involves applying a specific voltage to the cell, altering the charge level.

Detailed Application Field Plans

MT29F64G08CECCBH1-12IT:C finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F64G08CECCBH1-12IT:C include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F64G08CBABA

These models offer similar specifications and functionality, providing alternatives for different design requirements.

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