MT29F64G08AMABAC5:B

Product Overview

Category

MT29F64G08AMABAC5:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AMABAC5:B offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Compact package: The product comes in a small form factor, making it suitable for integration into compact electronic devices.
• Low power consumption: MT29F64G08AMABAC5:B is designed to consume minimal power, enhancing battery life in portable devices.

Package and Quantity

The MT29F64G08AMABAC5:B NAND flash memory is typically packaged in a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration for MT29F64G08AMABAC5:B is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Block Erase: MT29F64G08AMABAC5:B supports block erase functionality, allowing for efficient erasure of data in large chunks.
• Page Program: It enables the programming of data at the page level, facilitating fast and flexible data storage.
• Error Correction Code (ECC): The NAND flash memory incorporates ECC algorithms to ensure data integrity and error detection/correction.
• Wear Leveling: This feature evenly distributes write operations across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact form factor
• Low power consumption
• Reliable performance

Disadvantages

• Limited erase/program cycles
• Susceptible to physical damage if mishandled

Working Principles

MT29F64G08AMABAC5:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the appropriate voltage levels are applied to the memory cells, allowing for data retrieval or modification.

Detailed Application Field Plans

MT29F64G08AMABAC5:B finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for capturing and storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers.

Alternative Models

Some alternative models that offer similar functionality to MT29F64G08AMABAC5:B include: - Samsung K9K8G08U0B - Micron MT29F64G08CBABA - Toshiba TH58NVG6D2FTA20

These models provide comparable storage capacity, performance, and features to meet various application requirements.

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