MT29F1G08ABADAH4-ITX:D

Product Overview

Category

MT29F1G08ABADAH4-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1G08ABADAH4-ITX:D is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F1G08ABADAH4-ITX:D is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 Gigabit (128 Megabytes)
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (Read), Up to 100 Megabytes per second (Write)

Detailed Pin Configuration

The pin configuration of MT29F1G08ABADAH4-ITX:D is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ7 - Data inputs/outputs
8. R/B# - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page Read and Program Operations
• Block Erase Operation
• Random Access to Memory Cells
• Error Correction Code (ECC) Support
• Wear-Leveling Algorithm for Enhanced Endurance

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enable quick data access
• Compact size facilitates integration into small electronic devices
• Low power consumption helps conserve battery life

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per unit compared to traditional hard drives

Working Principles

MT29F1G08ABADAH4-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells can be electrically programmed and erased, allowing for non-volatile data storage.

The working principle involves applying appropriate voltages to the control pins to perform read, program, or erase operations on specific memory cells. The data is stored as electrical charges within the memory cells, with each cell representing a binary value (0 or 1).

Detailed Application Field Plans

MT29F1G08ABADAH4-ITX:D finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT29F1G08ABADAH4-ITX:D include: - Samsung K9K8G08U0D - Micron MT29F1G08ABAEAWP - Toshiba TH58NVG6D2FTA20

These alternative models provide comparable storage capacity, interface compatibility, and performance characteristics.

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