M29W160EB80ZA3SE TR

Product Overview

Category

M29W160EB80ZA3SE TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers a large amount of storage space for data.
• Fast read and write speeds: Allows for quick access and transfer of data.
• Compact size: Takes up minimal physical space within electronic devices.

Package

M29W160EB80ZA3SE TR is typically packaged in a small integrated circuit (IC) package, which ensures its protection from external elements and facilitates easy integration into electronic devices.

Essence

The essence of M29W160EB80ZA3SE TR lies in its ability to provide reliable and high-capacity storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

This product is commonly available in reels or trays, with each reel or tray containing a specific quantity of M29W160EB80ZA3SE TR units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2 M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/acceleration input
10. VSS: Ground

Functional Features

• Erase and Program Operations: M29W160EB80ZA3SE TR supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
• Automatic Page Write: Enables efficient programming of multiple bytes in a single operation.
• Hardware Data Protection: Built-in mechanisms ensure data integrity during power fluctuations or unexpected interruptions.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast read and write speeds facilitate quick data access and transfer.
• Compact size enables easy integration into various electronic devices.
• Hardware data protection ensures data integrity.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

M29W160EB80ZA3SE TR utilizes the principles of floating-gate transistors to store and retrieve data. It employs a combination of electrical charges to represent binary information (0s and 1s). The memory cells are organized into sectors, which can be individually erased or programmed.

During programming, an electric charge is applied to the floating gate, altering its threshold voltage and storing the desired data. Erasing involves removing the charge from the floating gate, resetting it to its initial state.

Detailed Application Field Plans

M29W160EB80ZA3SE TR finds applications in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. M29W160EB80ZA6E TR
2. M29W160EB80ZA3F TR
3. M29W160EB80ZA3QE TR
4. M29W160EB80ZA3RE TR
5. M29W160EB80ZA3TE TR

These alternative models offer similar specifications and functionality, providing options for different design requirements and availability from various manufacturers.

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