M29W128GL7AN6F TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface mount technology (SMT)
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 128 Megabits (16 Megabytes)
• Organization: 16M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Page Size: 256 bytes
• Erase/Program Suspend/Resume: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The M29W128GL7AN6F TR has the following pin configuration:

1. VCC: Power supply
2. A0-A22: Address inputs
3. DQ0-DQ7: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/ACC: Ready/Busy or Acceleration
8. RESET#: Reset
9. WP#/ACC: Write protect or Acceleration
10. RY/BY#: Ready/Busy output

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase capability
• Block erase capability
• Software data protection
• Hardware data protection
• Automatic sleep mode
• Deep power-down mode

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory retains data even when power is disconnected - Low power consumption - Sector and block erase capabilities for efficient data management

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (number of erase/write cycles) - Susceptible to physical damage if mishandled

Working Principles

The M29W128GL7AN6F TR is based on NOR Flash memory technology. It stores digital data using a grid of memory cells, where each cell can store one or more bits of information. The memory cells are organized in a matrix, with rows and columns forming the addressable locations. Data can be written to and read from these cells by applying appropriate voltage levels to the control pins.

Detailed Application Field Plans

The M29W128GL7AN6F TR is widely used in various electronic devices that require non-volatile storage, such as:

1. Mobile phones
2. Tablets
3. Digital cameras
4. Solid-state drives (SSDs)
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. M29W128GL7AN6E TR
2. M29W128GL7AN6P TR
3. M29W128GL7AN6S TR
4. M29W128GL7AN6T TR
5. M29W128GL7AN6U TR

These alternative models offer similar specifications and functionality to the M29W128GL7AN6F TR, providing customers with options based on their specific requirements.

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