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IXFN170N65X2

IXFN170N65X2

Introduction

The IXFN170N65X2 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability, low on-state resistance
  • Package: TO-268
  • Essence: Power efficiency and reliability
  • Packaging/Quantity: Typically available in reels of 1000 units

Specifications

  • Voltage Rating: 650V
  • Current Rating: 170A
  • On-State Resistance: 0.028Ω
  • Gate Threshold Voltage: 4V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN170N65X2 follows the standard pin configuration for a TO-268 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy rating

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low conduction losses
  • Fast switching speed
  • Reliable performance in high-power applications

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitivity to overvoltage conditions

Working Principles

The IXFN170N65X2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the device allows a high current to flow between the drain and source terminals with minimal resistance.

Detailed Application Field Plans

The IXFN170N65X2 finds extensive use in the following application fields: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Uninterruptible power supplies (UPS) - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN170N65X2 include: - IXFN180N10 - IXFN200N10 - IXFN220N10 - IXFN240N10

In conclusion, the IXFN170N65X2 is a highly efficient and reliable power MOSFET that caters to the demands of modern high-power electronic applications, providing superior performance and durability.

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Enumerați 10 întrebări și răspunsuri comune legate de aplicarea lui IXFN170N65X2 în soluțiile tehnice

Sure, here are 10 common questions and answers related to the application of IXFN170N65X2 in technical solutions:

  1. What is the maximum drain current of IXFN170N65X2?

    • The maximum drain current of IXFN170N65X2 is 170A.
  2. What is the maximum voltage rating of IXFN170N65X2?

    • The maximum voltage rating of IXFN170N65X2 is 650V.
  3. What type of package does IXFN170N65X2 come in?

    • IXFN170N65X2 comes in a TO-268 package.
  4. What is the typical on-state resistance of IXFN170N65X2?

    • The typical on-state resistance of IXFN170N65X2 is 0.065 ohms.
  5. Can IXFN170N65X2 be used in high-frequency applications?

    • Yes, IXFN170N65X2 can be used in high-frequency applications due to its low gate charge and intrinsic capacitances.
  6. Is IXFN170N65X2 suitable for motor control applications?

    • Yes, IXFN170N65X2 is suitable for motor control applications due to its high current and voltage ratings.
  7. What is the maximum junction temperature of IXFN170N65X2?

    • The maximum junction temperature of IXFN170N65X2 is 175°C.
  8. Does IXFN170N65X2 have built-in protection features?

    • IXFN170N65X2 has built-in overcurrent and overtemperature protection features.
  9. Can IXFN170N65X2 be used in parallel to increase current handling capability?

    • Yes, IXFN170N65X2 can be used in parallel to increase current handling capability in high-power applications.
  10. What are some common applications for IXFN170N65X2?

    • Common applications for IXFN170N65X2 include switch mode power supplies, motor drives, UPS systems, and welding equipment.