IS66WV51216DBLL-55BLI-TR

Product Overview

Category

IS66WV51216DBLL-55BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Reliable data retention

Package

IS66WV51216DBLL-55BLI-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS66WV51216DBLL-55BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Operating Voltage: 3.3 Volts
• Speed Grade: 55ns
• Interface: Parallel
• Pin Count: 48 pins
• Organization: 8M words x 16 bits

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /WE
37. /CAS
38. /RAS
39. /CS
40. CLK
41. CKE
42. /LDQM
43. UDQM
44. /BYTE
45. /ZZ
46. VCCQ
47. VCC
48. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• Low power standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package for easy integration

Disadvantages

• Limited compatibility with certain older systems
• Higher cost compared to some alternative memory technologies

Working Principles

IS66WV51216DBLL-55BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending specific commands and addresses to the memory controller, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS66WV51216DBLL-55BLI-TR finds applications in various electronic devices, including: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS66WV51216DBLL-55BLI-TR include: - MT48LC32M16A2P-75IT: 512 Megabit SDRAM, 3.3V, 75ns, Parallel Interface - K4S561632H-UC75: 512 Megabit SDRAM, 3.3V, 75ns, Parallel Interface - HYB39S512800AT-7: 512 Megabit SDRAM, 3.3V, 7ns, Parallel Interface - AS4C32M16SB-7TCN: 512 Megabit SDRAM, 3.3V, 7ns, Parallel Interface

These alternative models offer similar functionality and can be used as replacements or alternatives to IS66WV51216DBLL-55BLI-TR in various applications.

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