IS62WV12816EALL-55BLI-TR

Product Overview

Category

IS62WV12816EALL-55BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV12816EALL-55BLI-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS62WV12816EALL-55BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of the product. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV12816EALL-55BLI-TR is as follows:

1. Vcc
2. WE#
3. OE#
4. A0-A16
5. DQ0-DQ15
6. CE#
7. UB#/LB#
8. BYTE#
9. NC
10. GND

(Note: "#" denotes an active-low signal)

Functional Features

• Fast read and write operations
• Low power consumption in standby mode
• Easy interfacing with other electronic components
• High reliability and data integrity
• Wide operating temperature range

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing.
• Low power consumption helps prolong battery life in portable devices.
• Non-volatile memory ensures data retention even when power is lost.
• Large storage capacity accommodates a wide range of applications.
• Reliable performance guarantees data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance compared to some non-volatile memory types.
• Requires additional circuitry for interfacing with microcontrollers or processors.

Working Principles

IS62WV12816EALL-55BLI-TR utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast read and write operations without the need for periodic refreshing. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

IS62WV12816EALL-55BLI-TR finds application in various fields, including:

1. Computers and laptops for main memory storage.
2. Smartphones and tablets for data caching and temporary storage.
3. Industrial automation systems for storing critical data.
4. Automotive electronics for storing firmware and configuration settings.
5. Medical devices for data buffering and storage.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV12816EALL-55BLI-TR include:

1. MT48LC16M16A2P-75: 16Mb x 16-bit SDRAM
2. AS6C4008-55PCN: 4Mb x 8-bit SRAM
3. CY62157EV30LL-45ZSXI: 16Mb x 16-bit low-power SRAM
4. K6R4016V1D-UI10: 4Mb x 16-bit SRAM
5. M48Z35Y-70PC1: 32Kb x 8-bit non-volatile RAM

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, IS62WV12816EALL-55BLI-TR is a high-speed, low-power, non-volatile memory product that offers reliable data storage capabilities. Its wide range of applications and availability of alternative models make it a versatile choice for various electronic devices.