IS61WV25616EDBLL-8TLI

Product Overview

Category

IS61WV25616EDBLL-8TLI belongs to the category of high-speed, low-power CMOS static random access memory (SRAM) chips.

Use

This product is primarily used in various electronic devices and systems that require fast and reliable data storage and retrieval capabilities.

Characteristics

• High-speed operation: The IS61WV25616EDBLL-8TLI offers fast access times, allowing for quick data read and write operations.
• Low power consumption: This SRAM chip is designed to minimize power consumption, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 256 kilobits, this chip can store a significant amount of data.
• Wide operating voltage range: The IS61WV25616EDBLL-8TLI can operate within a voltage range of 2.7V to 3.6V, providing flexibility in different applications.

Package

The IS61WV25616EDBLL-8TLI is available in a small-outline integrated circuit (SOIC) package, which ensures ease of integration into electronic systems.

Essence

The essence of this product lies in its ability to provide high-speed and low-power data storage solutions for various electronic devices and systems.

Packaging/Quantity

The IS61WV25616EDBLL-8TLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Organization: 32K words x 8 bits
• Access Time: 8 nanoseconds
• Operating Voltage Range: 2.7V to 3.6V
• Standby Current: 10 microamps (maximum)
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC

Detailed Pin Configuration

The IS61WV25616EDBLL-8TLI has a total of 28 pins, which are assigned specific functions as follows:

1. A0-A14: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper Byte/Lower Byte Select Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Random Access: The IS61WV25616EDBLL-8TLI allows for random access to any location within its memory array, enabling efficient data retrieval.
• Asynchronous Operation: This SRAM chip operates asynchronously, meaning that the timing of read and write operations is not dependent on a clock signal.
• Byte-Wide Data Bus: The chip supports byte-wide data transfers, allowing for efficient handling of data in 8-bit units.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity meets the requirements of various applications.
• Wide operating voltage range provides flexibility in different scenarios.

Disadvantages

• Relatively higher cost compared to other types of memory chips.
• Limited storage capacity compared to some newer memory technologies.

Working Principles

The IS61WV25616EDBLL-8TLI utilizes CMOS technology to store and retrieve data. It consists of an array of memory cells, with each cell capable of storing one bit of information. The address inputs determine the location within the memory array where data is read from or written to. The control inputs (WE#, OE#, CE#) enable or disable specific operations such as reading, writing, and chip enable. The data inputs/outputs (DQ0-DQ7) handle the actual transfer of data between the chip and the external system.

Detailed Application Field Plans

The IS61WV25616EDBLL-8TLI finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Mobile phones - Networking equipment - Automotive electronics - Industrial control systems

In these applications, the SRAM chip provides fast and reliable data storage capabilities, supporting critical functions such as cache memory, buffering, and temporary data storage.

Detailed and Complete Alternative Models

• IS61WV25616EDBLL-10TLI: Similar to the IS61WV25616EDBLL-8TLI, but with a slightly slower access time of 10 nanoseconds.
• IS61WV25616EDBLL-12TLI: Another variant with an access time of 12 nanoseconds, suitable for applications where speed is not a critical factor.
• IS61WV25616