IS42S32400F-7BLI-TR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed synchronous dynamic random-access memory (SDRAM) - Low power consumption - Small form factor - Wide operating temperature range - RoHS compliant

Package: Ball Grid Array (BGA)

Essence: The IS42S32400F-7BLI-TR is a high-performance memory module designed for use in various electronic devices. It provides fast and reliable data storage capabilities while consuming minimal power.

Packaging/Quantity: The IS42S32400F-7BLI-TR is typically packaged in reels and comes in quantities of 250 or 500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Data Rate: 133 MHz
• Operating Voltage: 2.5V ± 0.2V
• Interface: Parallel
• Package Dimensions: 8mm x 10mm
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS42S32400F-7BLI-TR has a total of 54 pins. Here is the detailed pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. WE#
53. CAS#
54. RAS#

Functional Features

• High-speed data transfer with a maximum data rate of 133 MHz
• Four independent banks for simultaneous access
• Burst mode operation for efficient data retrieval
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages: - High-performance memory module suitable for demanding applications - Low power consumption for extended battery life in portable devices - Small form factor allows for space-efficient designs - Wide operating temperature range enables usage in various environments - RoHS compliance ensures environmental friendliness

Disadvantages: - Limited memory size compared to higher-capacity modules - Parallel interface may not be suitable for all applications - Sensitive to electrostatic discharge (ESD) during handling

Working Principles

The IS42S32400F-7BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory module is accessed through an address and data bus, allowing for read and write operations.

During operation, the memory controller sends commands to the IS42S32400F-7BLI-TR to perform specific tasks such as reading or writing data. The module utilizes burst mode operation to transfer multiple data words in a single access, improving overall efficiency.

Detailed Application Field Plans

The IS42S32400F-7BLI-TR is commonly used in various electronic devices that require high-speed and reliable data storage capabilities. Some typical application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players benefit from the low power consumption and small form factor of the IS42S32400F-7BLI-TR.
2. Networking Equipment: Routers, switches, and network appliances utilize the high-performance memory module for efficient data processing and caching.
3. Industrial Control Systems: Automation systems, robotics, and control panels rely on the