IS42S16160D-6TLI-TR

Product Overview

Category

IS42S16160D-6TLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and retrieving data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S16160D-6TLI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S16160D-6TLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Speed: 6 nanoseconds (max)
• Voltage Supply: 3.3V ± 0.3V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160D-6TLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /CLK
40. VSS

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• Internal pipelined architecture for efficient data access
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Sensitive to electrical noise, requiring careful PCB layout and signal routing.
• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the nature of DRAM cells, requiring periodic refresh.

Working Principles

IS42S16160D-6TLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in individual memory cells that are organized in a matrix-like structure. The memory cells store charge in capacitors, which needs to be periodically refreshed to maintain data integrity. Accessing data from the memory involves sending commands and addresses to select the desired location and transferring the data through the data pins.

Detailed Application Field Plans

IS42S16160D-6TLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S16160D-6TLI-TR include: - IS42S16320D-7TLI-TR - MT48LC16M16A2P-75IT - K4S561632H-UC75

These models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S16160D-6TLI-TR is a high-speed, low-power, and compact DRAM module used in various electronic devices. Its efficient data storage and retrieval capabilities make it an essential component in modern computing and communication systems.

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