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BCP5616E6327HTSA1
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching of electronic signals - Characteristics: High current gain, low noise, and high frequency capability - Package: SOT-23 - Essence: NPN silicon transistor - Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications: - Collector-Base Voltage (VCBO): 80V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 1A - Power Dissipation (Ptot): 330mW - Transition Frequency (fT): 250MHz
Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor
Functional Features: - High current gain for amplification purposes - Low noise characteristics for signal processing applications - High frequency capability for RF applications
Advantages: - Small package size for space-constrained designs - High transition frequency for RF applications - Low noise characteristics for signal processing
Disadvantages: - Limited power dissipation capability - Relatively low collector-emitter voltage rating
Working Principles: The BCP5616E6327HTSA1 operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers in the semiconductor material to control the flow of current.
Detailed Application Field Plans: - Audio amplification circuits - Radio frequency (RF) signal amplification - Signal processing applications
Detailed and Complete Alternative Models: - BCP56 - BC337 - 2N3904 - 2N2222
This comprehensive entry provides a detailed overview of the BCP5616E6327HTSA1 transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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What is BCP5616E6327HTSA1?
- BCP5616E6327HTSA1 is a PNP Silicon AF Transistor designed for use in audio amplifier and driver applications.
What are the key features of BCP5616E6327HTSA1?
- The key features include high current gain, low collector-emitter saturation voltage, and low noise.
What are the typical applications of BCP5616E6327HTSA1?
- Typical applications include audio amplification, driver stages in audio equipment, and general purpose switching.
What is the maximum collector current of BCP5616E6327HTSA1?
- The maximum collector current is 1A.
What is the maximum collector-emitter voltage of BCP5616E6327HTSA1?
- The maximum collector-emitter voltage is 80V.
What is the power dissipation of BCP5616E6327HTSA1?
- The power dissipation is 625mW.
What are the recommended operating conditions for BCP5616E6327HTSA1?
- The recommended operating conditions include a collector current of 100mA, a collector-emitter voltage of 45V, and an ambient temperature of 25°C.
What are the thermal characteristics of BCP5616E6327HTSA1?
- The thermal resistance from junction to ambient is 250°C/W.
What are the package dimensions of BCP5616E6327HTSA1?
- The package dimensions are 2.9mm x 2.8mm x 1.15mm.
Where can I find the detailed datasheet for BCP5616E6327HTSA1?
- The detailed datasheet can be found on the manufacturer's website or through authorized distributors.