S70GL02GP11FFIR22

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated circuit (IC) package
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Varies depending on manufacturer and customer requirements

Specifications

• Model: S70GL02GP11FFIR22
• Capacity: 2 gigabytes (GB)
• Interface: Parallel NOR Flash
• Operating Voltage: 3.0V - 3.6V
• Access Time: 90 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S70GL02GP11FFIR22 flash memory module has a specific pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte control
9. RY/BY#: Ready/busy status
10. WP#/ACC: Write protect/access protection control
11. VPP: Programming voltage
12. NC: No connection

Functional Features

• High-speed read and write operations
• Efficient block erase and programming algorithms
• Advanced error correction techniques
• Low power consumption
• Hardware and software data protection mechanisms
• Support for multiple operating modes
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access speeds
• Non-volatile memory retains data even without power
• Reliable and durable
• Suitable for a wide range of electronic devices

Disadvantages

• Higher cost compared to other types of memory
• Limited endurance (program/erase cycles)
• Requires specific programming voltage for certain operations

Working Principles

The S70GL02GP11FFIR22 flash memory utilizes the principles of floating-gate transistors to store and retrieve data. It employs a parallel NOR architecture, allowing for simultaneous read and write operations. When data is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior and storing the desired information. During read operations, the stored charge is detected, enabling data retrieval.

Detailed Application Field Plans

The S70GL02GP11FFIR22 flash memory module finds applications in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics (e.g., digital cameras, smartphones)

Detailed and Complete Alternative Models

1. S29GL01GT10TFI010: 1GB parallel NOR flash memory
2. MT29F2G08ABAEAWP-IT:E: 2GB NAND flash memory
3. AT25SF041-SSHD-T: 4Mb serial NOR flash memory
4. W25Q128JVSIQ: 128Mb serial NOR flash memory
5. MX30LF1G18AC-TI: 1GB parallel NOR flash memory

These alternative models offer similar functionality and can be considered as alternatives to the S70GL02GP11FFIR22 flash memory module.

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