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C3M0120100K
Product Overview
- Category: Power MOSFET
- Use: High-frequency power conversion applications
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: TO-247-4
- Essence: Silicon Carbide Power MOSFET
- Packaging/Quantity: Tube/25
Specifications
- Voltage - Rated: 1200V
- Current - Non-Continuous (Tc): 48A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 24A, 20V
- Input Capacitance (Ciss) @ Vds: 3100pF @ 25V
- Power Dissipation (Max): 300W
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Not Connected
- Pin 4: Drain
Functional Features
- Fast switching speed for high-frequency applications
- Low on-resistance for high-efficiency power conversion
- Enhanced thermal performance for improved reliability
Advantages and Disadvantages
- Advantages:
- High efficiency
- Fast switching speed
- Low on-resistance
- Enhanced thermal performance
- Disadvantages:
- Higher cost compared to traditional MOSFETs
- More sensitive to overvoltage conditions
Working Principles
The C3M0120100K utilizes silicon carbide technology to achieve high-performance power conversion. It leverages the unique properties of silicon carbide to deliver superior efficiency and fast switching characteristics.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of high-frequency power conversion applications, including: - Switched-mode power supplies - Solar inverters - Motor drives - Electric vehicle charging systems
Detailed and Complete Alternative Models
- Alternative Model 1: C3M0065100K (650V, 31A, 65 mOhm)
- Alternative Model 2: C3M0075120K (750V, 30A, 75 mOhm)
- Alternative Model 3: C3M0150120K (1500V, 16A, 150 mOhm)
Note: The above information is based on the product's datasheet and may be subject to change.
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What is C3M0120100K?
- C3M0120100K is a silicon carbide power MOSFET designed for high-frequency and high-efficiency applications.
What are the key features of C3M0120100K?
- The key features include low on-resistance, fast switching speed, high temperature operation, and high reliability.
What are the typical applications of C3M0120100K?
- Typical applications include power supplies, solar inverters, motor drives, and electric vehicle charging systems.
What is the maximum voltage rating of C3M0120100K?
- The maximum voltage rating is typically around 1200 volts.
How does C3M0120100K compare to traditional silicon MOSFETs?
- C3M0120100K offers lower switching losses, higher efficiency, and better thermal performance compared to traditional silicon MOSFETs.
What are the thermal considerations when using C3M0120100K?
- Proper heat sinking and thermal management are crucial due to its high power density and high-temperature operation.
Can C3M0120100K be used in parallel configurations for higher power applications?
- Yes, C3M0120100K can be used in parallel to achieve higher power levels with proper current sharing and gate drive considerations.
Are there any specific gate driver requirements for C3M0120100K?
- It is recommended to use gate drivers optimized for driving silicon carbide MOSFETs to maximize performance and reliability.
What are the potential EMI/EMC considerations when using C3M0120100K?
- Due to its fast switching speed, proper EMI/EMC filtering and layout considerations are important to minimize electromagnetic interference.
Where can I find detailed application notes and design resources for C3M0120100K?
- Detailed application notes and design resources can be found on the manufacturer's website or through their technical support channels.