BLF182XRU Encyclopedia Entry

Product Overview

The BLF182XRU is a high-power RF transistor designed for use in radio frequency (RF) applications. This transistor belongs to the category of electronic components and is commonly used in RF power amplifiers. Its characteristics include high power handling capability, excellent linearity, and wide frequency coverage. The package type for the BLF182XRU is a metal-ceramic package, and it is typically sold individually. The essence of this product lies in its ability to amplify RF signals efficiently, making it an essential component in RF communication systems.

Specifications

• Frequency Range: 470 - 860 MHz
• Output Power: 300 W
• Gain: 17 dB
• Package Type: Metal-Ceramic
• Operating Voltage: 32 V
• Operating Temperature Range: -40°C to +150°C

Detailed Pin Configuration

The BLF182XRU features a 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

• High power handling capability
• Excellent linearity
• Wide frequency coverage
• Suitable for broadband applications

Advantages and Disadvantages

Advantages

• High power output
• Wide frequency range
• Good linearity

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful thermal management due to high power dissipation

Working Principles

The BLF182XRU operates based on the principles of field-effect transistors (FETs). When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This control allows the transistor to amplify RF signals with high power and linearity.

Detailed Application Field Plans

The BLF182XRU is widely used in the following applications: - Broadcast transmitters - Cellular base stations - Radar systems - RF test equipment

Detailed and Complete Alternative Models

Some alternative models to the BLF182XRU include: - BLF184XRU - BLF188XRU - MRF151G

In conclusion, the BLF182XRU is a high-power RF transistor with excellent performance characteristics, making it suitable for a wide range of RF applications.

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